We report on the space charge spectroscopy studies performed on thermally treated melt-grownsingle crystal ZnO. The samples were annealed in different ambients at 700 C and also in oxygenambient at different temperatures. A shallow donor with a thermal activation enthalpy of 27meVwas observed in the as-received samples by capacitance-temperature, CT scans. After annealing thesamples, an increase in the shallow donor concentrations was observed. For the annealed samples,E27 could not be detected and a new shallow donor with a thermal activation enthalpy of 35meVwas detected. For samples annealed above 650 C, an increase in acceptor concentration wasobserved which affected the low temperature capacitance. Deep level transient spectroscopyrevealed the presence of five deep level defects, E1, E2, E3, E4, and E5 in the as-received samples.Annealing of the samples at 650 C removes the E4 and E5 deep level defects, while E2 alsoanneals-out at temperatures above 800 C. After annealing at 700 C, the T2 deep level defect wasobserved in all other ambient conditions except in Ar. The emission properties of the E3 deep leveldefect are observed to change with increase in annealing temperature beyond 800 C. For samplesannealed beyond 800 C, a decrease in activation enthalpy with increase in annealing temperaturehas been observed which suggests an enhanced thermal ionization rate of E3 with annealing.
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